Substrate deformation detection and correction

ABSTRACT

A method and apparatus for detecting and correcting incoming substrate deformation is disclosed. Substrates are positioned in a first process chamber, where the presence and type of substrate bow is detected. Based upon the detection of substrate bow, and a determination of whether the substrate has a compressive bow or a tensile bow, a substrate processing program is selected for execution. The substrate processing program can be executed in the first process chamber or in a second process chamber to correct or alleviate the bow prior to or during further processing of the substrate.

PRIORITY CLAIM

The present disclosure claims priority to U.S. Provisional PatentApplication No. 62/668,175, “SUBSTRATE DEFORMATION DETECTION ANDCORRECTION,” filed May 7, 2018, incorporated herein by reference in itsentirety.

BACKGROUND Field

Embodiments of the present disclosure generally relate to processchambers used for the fabrication of substrates, and more specifically,to methods and apparatus for substrate deformation detection andcorrection in process chambers.

Description of the Related Art

Substrates can be received with a deformed profile or with a flatprofile from a supplier. In some examples, subsequent to variousprocessing operations, the substrate can deform or further deform,including bowing. The deformation can reduce processing precision andresult in damaged substrates. Incoming substrates can be processed toreduce or remove this bowing. However, these processes often result inovercorrecting or under-correcting the deformation, thereby notadequately addressing the bowing issue.

Thus, there is a need to be able to detect and correct incomingsubstrate deformation.

SUMMARY

The present disclosure generally relates to detecting and correctingincoming substrate deformation. In one example, a method for substrateprocessing includes: generating a plasma in a first process chamberwhile a substrate is positioned therein; and generating a fingerprint ofthe substrate based on a plurality of sensors in the first processchamber. The method can further include comparing the fingerprint to aplurality of stored fingerprint models to determine if the substrate isdeformed; and selecting, based on a determination that the substrate isdeformed, a substrate processing program for the substrate to correctthe substrate deformation. In another example, a method for substrateprocessing includes: generating a fingerprint of a substrate positionedin first process chamber; comparing the fingerprint to a plurality ofstored fingerprint models, wherein each fingerprint model is associatedwith a compressive bow or a tensile bow; and selecting, based on thecomparing, a substrate processing program for the substrate.

In another examples, computer-readable storage medium is configured toexecute instructions to cause a system to: generate a plasma in a firstprocess chamber, a substrate being positioned in the first processchamber; and generate a fingerprint of the substrate based on aplurality of sensors in the first process chamber, the plurality ofsensors being configured to detect a low-frequency or a high-frequencyreflected power. The system can be further configured to compare thefingerprint to a plurality of stored fingerprint models to determine ifthe substrate is deformed; and select, based on a determination that thesubstrate is deformed, a substrate processing program for the substrateto correct substrate deformation.

BRIEF DESCRIPTION OF THE DRAWINGS

So that the manner in which the above recited features of the presentdisclosure can be understood in detail, a more particular description ofthe disclosure, briefly summarized above, may be had by reference toembodiments, some of which are illustrated in the appended drawings. Itis to be noted, however, that the appended drawings illustrate onlyexemplary embodiments and are therefore not to be considered limiting ofscope, as the disclosure may admit to other equally effectiveembodiments.

FIGS. 1A and 1B illustrate substrate deformation detectable according toembodiments of the present disclosure.

FIG. 2 is a partial schematic illustration of a system for detecting andcorrecting incoming substrate deformation, according to embodiments ofthe present disclosure.

FIG. 3 is a method of analyzing a plurality of low-frequency (LF)refraction and categorizing a plurality of LF refraction in a firstprocess chamber, according to embodiments of the present disclosure.

FIG. 4 is a graph of the first process chamber output power percentageover time for a plurality of substrates with both tensile andcompressive bows, according to embodiments of the present disclosure.

FIG. 5 is a graph of a peak low-frequency power reflected for aplurality of substrates, according to embodiments of the presentdisclosure.

FIG. 6 is a method of detecting incoming substrate deformation accordingto embodiments of the present disclosure.

DETAILED DESCRIPTION

The present disclosure is directed towards detecting and correctingincoming substrate deformation (bowing). Substrates used for thefabrication of electronics, including semiconductor and solid-statememory devices, undergo a plurality of processing operations. Substratesreceived from a substrate fabrication vendor or from an internal vendoror upstream operation can be received as flat. However, in someexamples, the substrates can be deformed during upstream operations,leading to poor quality devices and/or scrapping of substrates indownstream operations including inspection. This deformation, includingbowing, can lead to damage or scrapping due to challenges seating thebowed substrates on substrate support pedestals. If substrates are notproperly seated on the pedestals, subsequent processing of thesubstrate, including material deposition and patterning, can bechallenging. This can be especially true in atomic layer deposition(ALD), chemical vapor deposition (CVD), and physical vapor deposition(PVD) systems, as well as other systems designed to form thin metallic,dielectric, or combination layers, including those using plasma.

For example, if a substrate is positioned on a substrate supportpedestal (or other support) such that the substrate is not flat againstthe supporting surface, backside defects can occur that can causereduced substrate quality and which can negatively impact furtherprocessing operations. For example, contamination can form on the bottomof the substrate if there is a gap or gaps between the substrate and thesubstrate support. This contamination can spread among and betweenchambers of a fabrication system as the substrate is moved betweenchambers. Incoming substrate bow can be corrected; however, substrateswith different types and degrees of bowing can respond differently tothe corrective measures. Conventional processing methods apply a singlecorrection scheme to all incoming substrates, regardless of theexistence, type, or degree of defect. The degree of bowing can bemeasured in units of height such as microns or nanometers. The degree ofbowing can be positive or negative depending upon the type of bow.

FIGS. 1A and 1B illustrate substrate deformation detectable by thesystems and methods discussed herein. As shown in FIGS. 1A and 1B, thesubstrate deformation can take the shape of bowing, either compressivebowing as shown in FIG. 1A or tensile bowing as shown in FIG. 1B. In thecompressive bowing in FIG. 1A, a bottom center surface 104 of thesubstrate 102 is in contact with a substrate support pedestal 106 of achamber. However, edges 108 of the substrate 102 are directed up, awayfrom, and not in contact with the substrate support pedestal 106. Thiscan make transfer and handling of the substrate 102 challenging and cancause problems during thin film deposition. Conversely, the tensilebowing shown in FIG. 1B results in a bottom center surface 114 of thesubstrate 110 that is not in contact with the substrate support pedestal106. Rather, the edges 112 of the substrate 110 are in contact with thesubstrate support pedestal 106. Additionally, a cavity 116 is formedunderneath the bottom center surface 114 of the substrate 110 due to thesubstrate bowing.

The systems and methods discussed herein may employ a first processchamber optionally coupled to a second process chamber and/or additionalprocess chambers. The process chambers have a substrate support pedestalcapable of having a voltage applied thereto, and are configured togenerate a plasma therein. An amount of power used to generate plasma inthe first process chamber is monitored as discussed below. This powermonitoring is used to determine the existence, type, and degree ofsubstrate bow. This determination is made by comparing a graph of thepower used to generate plasma in the first process chamber, which can bereferred to as a fingerprint, to a plurality of models based on ahistory of fingerprint generation and analysis for a plurality ofsubstrates across one or more first process chambers. The models aregenerated from a plurality of historical data regarding substratedeformation and correction of deformation. In one example, the modelsare experimentally determined and saved database for later reference.The models are dynamically updated as additional substrates areprocessed using the systems and methods discussed herein. Fingerprintsfor each of compressive and tensile bowing are associated with differentcharacteristics which contribute to the characterization of fingerprintsbased on the models. The models are directed at least towardscompressive and tensile bowing types, and can, in some examples, some orall models can be further directed to a degree of bowing within eachtype. Each model can be associated, e.g., linked, to at least onesubstrate processing program that is configured to correct a bow. Basedon the comparison, a substrate processing program is selected andexecuted to correct or alleviate the substrate bow. In such an example,the substrate undergoes processing, such as a deposition or etchprocess, while bowing is reduced. Such processing improves processinguniformity.

The methods discussed herein include determining (1) when a substrate isbowed, (2) a type of substrate bow, which can be tensile or compressive,and (3) a degree of the bow. Based on one or more of thesedeterminations, a substrate processing program is selected, and the bowcan be corrected in the first process chamber where the bow is measured.The first process chamber can be coupled to a second process chamber,such as a CVD, PVD, or PE-CVD process chamber, among other chambers. Atransfer chamber can be used to transfer the substrate among and betweenchambers. Alternatively, the substrate bow may be corrected in thesecond process chamber.

In one example, which can be combined with other examples, powermeasurements including forward and reflected power are obtained duringoperation of the first process chamber. The forward power is the powersupplied to elements in the first process chamber (e.g., a substratesupport pedestal), for example, from an RF power source. Reflected poweris the power that is lost during plasma maintenance, including thoselosses due to resistive and capacitive losses, among others. Thus, thedifference between the forward and reflected power is the powerdelivered to a load. The reflected power readings, which may be for lowor high frequency power as discussed herein, are employed to generatefingerprints, which are used to generate models. These models areassociated with substrate processing programs that facilitate bowcorrection. The differences in the fingerprints generated betweencompressive bowing and tensile bowing are used to generate models. Themodels indicate which substrate processing program is to be selected tocorrect the identified bow of the substrate.

In the methods discussed herein, each substrate positioned in the firstprocess chamber is monitored for reflected power. The fingerprintcreated by the monitoring of the reflection of power by each substrateis compared to the models to determine the presence, type, and in someexamples an extent of bowing in order to select a substrate processingprogram (e.g., model) to correct the bow, since the models areassociated to substrate processing programs. In some embodiments, thesubstrate processing program is executed in the first process chamber tocorrect the bow, which can save processing costs since the transfer(robotic handling) of at least compressively bowed substrates from afirst process chamber into the second process chamber can result indamaged substrates. In alternate embodiments, the substrate processingprogram is executed in the process chamber to correct the bow, insteadof in the first process chamber.

Each substrate processing program is associated with one or morevariables. The variables can include: an electrostatic voltage appliedto a substrate support pedestal, a power level and frequency used toform a plasma, a gas mixture, a gas flow rate for each gas orcombination of gases in the gas mixture, a pressure, a time or aplurality of times associated with the application of voltage, and otherparameters, as appropriate. The types of process parameters and rangesof process parameters associated with each substrate processing programcan be experimentally determined using data from previously processedsubstrates. Such data may be stored in a database, in which illustrativeor example fingerprints are associated with process programs. Thesetypes and ranges of process parameters can be dynamically updated usingdata from substrates processed for substrate deformation according toexamples herein. The substrates discussed herein described as incomingsubstrates may have one or more layers formed thereon. The layers caninclude silicon formed by tetraethyl orthosilicate (TEOS) and oxidelayers thereof, as well as nitride layers such silicon nitride, orstacks of alternating oxide-nitride layers.

FIG. 2 is a partial schematic illustration of a system 200 for detectingand correcting incoming substrate deformation. The system 200 includes afirst process chamber 206 and an optional second process chamber 208.The first process chamber 206 and the second process chamber 208 can beused for forming and sustaining plasma and for depositing thin filmmetallic, dielectric, and composite layers on a substrate and/or topattern a substrate. In one example, the system 200 includes a substratestaging apparatus 202, for example a front end for receiving substratecassettes, and a substrate transfer apparatus 204 coupled to thesubstrate staging apparatus 202. The substrate transfer apparatus 204 isconfigured to move substrates either one by one or in batches into thefirst process chamber 206. The first process chamber 206 includes aplurality of sensors 210 coupled to one or more impedance-matchingcircuits 219 (the combination of which may be referred to as an“automatch”). The plurality of sensors 210 can be configured to detect alow-frequency or a high-frequency reflected power when plasma isgenerated in the first process chamber 206. The second process chamber208 may be similarly equipped.

The first process chamber 206 is configured to receive substrates fromthe substrate transfer apparatus 204. In an embodiment, substratesreceived from the substrate transfer apparatus 204 have been throughprevious operations. The previous operations can include depositionprocesses to form one or more layers on a substrate surface, includinglayers of Si_(x)O_(y) and Si_(x)N_(y). In some examples, the one or morelayers may have been patterned in previous operations. The incomingsubstrates received by the first process chamber 206 can include layersdeposited to a thickness from 0.1 microns to 10 microns, or otherthicknesses. Methods discussed herein alleviate the bow on suchsubstrates without negatively impacting the structure and function oflayers or stacks of layers on the substrate.

In an embodiment, which can be combined with other embodiments, thefirst process chamber 206 is configured to do one or more of heat asubstrate, to detect the presence and type of bowing in a substrate, andmay, in some configurations, be configured to form or remove a layer onthe substrate. In one example, the first process chamber 206 isconfigured to generate capacitively-coupled plasma therein. In thisexample, the first process chamber 206 includes one or more electrodes222 (two are shown), a gas manifold 218, and a plurality ofthermocouples positioned in the walls or in a substrate support 220 ofthe first process chamber 206. The electrodes 222 can be wholly orpartially embedded within the substrate support 220, or coupled to thesubstrate support 220, or both. The gas manifold 218 facilitatesdistribution of plurality of ionizable gases into the first processchamber 206. Such gases include argon (Ar), helium (He), krypton (Kr),xenon (Xe), or other gases or combinations of gases that can formplasma.

One or more RF power generating apparatuses 214 are coupled to the firstprocess chamber 206 and to the second process chamber 208 and areconfigured to apply power to generate plasma in the chambers 206 and208. While two RF power generating apparatuses 214 are illustrated, itis contemplated that each of the first process chamber 206 and thesecond process chamber 208 may share an RF power generating apparatuses214. The one or more RF power generating apparatuses 214 facilitateformation of plasma within the first process chamber 206 and/or thesecond process chamber 208 when one or more gases such as argon (Ar),helium (He), krypton (Kr), or xenon (Xe) are present in the firstprocess chamber 206 and/or the second process chamber 208.

A controller 224 is coupled to the substrate staging apparatus 202, thesubstrate transfer apparatus 204, the first process chamber 206, and thesecond process chamber 208. A plurality of substrate processing programsis stored in a non-transitory memory 216 and is accessible by thecontroller 224, which is configured to execute the plurality ofsubstrate processing programs. Each substrate processing program isconfigured to adjust one or more characteristics of conditions withinthe first process chamber 206 or the second process chamber 208 toalleviate substrate bow. The controller 224 can be configured to executeinstructions associated with one or more applications/programs of thesystem 200.

The plurality of sensors 210 coupled to or disposed in the first processchamber 206 are employed to determine if incoming substrates have a bow.The plurality of sensors 210 are further used to determine, if a bow ispresent, if the bow is compressive or tensile, as discussed below.Subsequently, based on the presence and the type of bow of the incomingsubstrate, a plurality of logic (non-transitory computer-readablemedium) stored in the non-transitory memory 216 is executed to select asubstrate processing program to correct the determined bow. Eachsubstrate processing program can be associated with substrateprocessing, e.g., film formation, patterning, cleaning, etc., in eitheror both of the first process chamber 206 or the second process chamber208. The stored substrate processing programs are each associated with atype of bowing (compressive or tensile). In some examples, at least somesubstrate processing programs can be further associated with a degree ofbowing. The degree of bowing can be defined as positive or negative,and/or as a numerical value or range of values.

In one example, a substrate processing program is selected based uponone or more of the type or the degree of bowing detected by the sensors210. The selected program is executed by the controller 224 to processthe substrate to alleviate the bow via a voltage applied to thesubstrate support 220 (e.g., an electrostatic chuck thereof) of thefirst process chamber 206 and/or the substrate support pedestal 226 ofthe second process chamber 208. For example, a predetermined amountvoltage may be applied to an electrostatic chuck upon which thesubstrate is positioned. Application of a predetermined voltage, inaccordance with the selected program, reduces or eliminates the bow ofthe substrate without application of excessive stress which couldotherwise occur when a tailored program selection is not employed. Otherprocessing parameters, besides voltage, may also be employed to correctsubstrate bow. In addition, the processing program can also direct theformation of plasma in the first process chamber 206 or the secondprocess chamber 208.

FIG. 3 is a method 300 of analyzing a plurality of low-frequency (LF)reflection and categorizing a plurality of LF reflection in a firstprocess chamber. The low frequency power discussed herein refers topower below about 500 kHz, and the high frequency power discussed hereinis at or above about 13.56 MHz. In the method 300, at operation 302, oneor more substrates is loaded one by one into the first process chamber.Optionally, the first process chamber is configured to control the oneor more substrates within a temperature within a range of 200° C. to500° C. while maintaining a vacuum therein. The optional heatingfacilitates one or more of processing of the substrate, mimicking ofprocess conditions under which a substrate is processed, and reductionin substrate bow. At operation 304, subsequent to the substrate receiptat operation 302, capacitive plasma is generated in the first processchamber. In one example, the plasma is generated at operation 304 byapplying a current of about 500 kHz to the first process chamber whileflowing argon (Ar), helium (He), krypton (Kr), or xenon (Xe) or anothergas, at a pressure from about 1 Torr to about 20 Torr.

In operation 306, an amount of reflected power of the plasma generatedis measured. A graph is generated to create a fingerprint of thecorresponding substrate being processed. The graph generated can bereferred to as a fingerprint because the graph is associated with theunique reaction of a substrate to plasma in the chamber based on thedeformation type and degree of the substrate. In one example, thefingerprint is a graph of reflected power percentage (of total outputpower) versus time. Other fingerprints, including heating temperature orheater output percentage, versus time, are also contemplated and can beused alone or in combination with a graph of the reflected powerpercentage according to various examples and combinations of examplesherein. Reflected power is measured using an automatch sensor, othersensor, or impedance matching hardware equipped for such measurements.

In operation 308, the graph, e.g., fingerprint, generated at operation306 is analyzed. The analysis is used to determine a plurality ofcharacteristics of the fingerprint that indicate that the bow is (1)present and (2) whether the bow compressive or tensile. This analysis isused at operation 310 to generate an association between either acompressive or a tensile designation and a plurality of fingerprintcharacteristics and combinations of characteristics. The analysis atoperation 308 is used in operation 310 to generate associations betweenthe bow characteristics of the substrate and the fingerprintcharacteristics. In one example, the operation 310 is a modelingoperation. Each model is associated with a type of bowing, compressiveor tensile, and, in some embodiments, further associated with a degreeof bowing. Stated otherwise, operation 310 corresponds the bow of asubstrate with a particular fingerprint. Thus, the bows oflater-processed substrates can be identified based on a respectivefingerprint of the later-processed substrates.

At operation 312, the associations generated at operation 310 betweenthe bow characteristics of the substrate and the fingerprintcharacteristics are linked to substrate processing programs. Such asassociations may be determined experimentally. These linked associationsare stored for later reference. The substrate processing programs andassociations are stored, for example, in the non-transitory memory. Theassociation of models to substrate processing programs facilitates thecorrection of substrate bow. For example, each substrate processingprogram may include a process recipe for correcting a specific type anddegree of bow (as well as other processing details), based on arecognized model or fingerprint. Thus, as substrate models and/orfingerprints are identified, the bow of a substrate can be identifiedand can be alleviated via execution of a corresponding substrateprocessing program.

At operation 314 of the method 300, a plurality of inspection parametersare received from downstream operations, including coating uniformitydata or substrate damage/scrap data. The information is received atoperation 314 and stored in memory. In an embodiment, which can becombined with other embodiments, information from downstream operationsreceived at operation 314 can be employed to modify the associationsgenerated at operation 310 and/or the processing programs, in order toimprove processing. In other examples, which can be combined with otherexamples herein, information from downstream operations received atoperation 314 can be employed to modify the associations of bow typesand/or bow extents and substrate processing generated at operation 312.Thus, the degree and extent of bow correction can be continuouslyrefined to improve process performance.

Each substrate processing program of the plurality of substrateprocessing programs discussed herein includes a process recipe orinstructions for a voltage to be supplied to the substrate supportpedestal or other substrate support. The selected processing program mayalso include other parameters, such as a gas or gas mixture composition,gas flow rates rate, processing time, temperature, and a pressure of aprocess chamber, in order to facilitate processing of a substrate whileundergoing bow correction. In some examples, the substrate processingprograms further include parameters associated with the transfer ofsubstrates from the first process chamber into the second processchamber.

FIG. 4 is a graph of the first process chamber output power percentageover time for a plurality of substrates with both tensile andcompressive bows. FIG. 4 shows a plurality of substrate data for bothcompressive and tensile bows. The characteristics of the curves areanalyzed as discussed herein to generate a fingerprint associated withcompressive bows and a fingerprint associated with tensile bows. Thecurves' characteristics can be associated with a type and degree ofbowing. Each fingerprint as shown in FIG. 4 is generated by the method300 and analyzed at operation 308 for a plurality of characteristicsincluding an area under the curve, slope measured over various timeperiods, peak, change in slope, and other characteristics. Suchanalyzation facilitates determination, and correction, of substrate bow.

FIG. 5 is a graph of a peak low-frequency power reflected for aplurality of substrates with about a 3 micron film deposited on asurface of the substrate. The peak power axis of FIG. 5 shows how muchpower is reflected from the plasma in the first process chamber. Themore power that is lost during plasma maintenance, the more severe thesubstrate bowing. The incoming substrate bow of FIG. 5 is a bowing ofthe substrates (1) with no voltage applied to the substrate supportpedestal in the process chamber (“without ESC”), (2) with either 350volts or 600 volts applied to an electrostatic chuck of the substratesupport pedestal, and (3) with 350 volts applied to the electrostaticchuck of the substrate support pedestal and with a plasma stabilized inthe process chamber.

In various examples, a substrate bow detected using the methods andsystems herein may be from −200 microns to +290 microns or greater. Aplurality of impedance-matching circuits (219 in FIG. 2), and theplurality of sensors 210 associated therewith, are coupled to the firstprocess chamber to facilitate determination of the output (forward)power and the peak low-frequency reflected power, as shown respectivelyin FIGS. 4 and 5.

FIG. 6 is a method 600 of detecting incoming substrate deformationaccording to embodiments of the present disclosure. At operation 602 ofthe method 600, a substrate is received in a first process chamber thatmay be similarly configured to the first process chamber 206 in FIG. 2.The substrate received at operation 602 can have one or more layersformed thereon. The one or more layers can include a silicon oxide layer(Si_(x)O_(y)), a nickel oxide (Ni_(x)O_(y)), silicon nitride(Si_(x)N_(y)), an oxynitride layer, or a stack of alternatingoxide-nitride layers, among other examples. The first process chamber(e.g., 206 in FIG. 2) can be heated to a temperature of 200° C. to 500°C. when the substrate is positioned therein. At operation 604,subsequent to the substrate receipt at operation 602, capacitive plasmais generated in the first process chamber 206.

During the operation of the first process chamber 206, at operation 606,a plurality of sensors detects reflected power, and the reflected poweris graphed to generate a fingerprint, such as that shown in FIG. 5. Thefingerprint is analyzed at operation 608. This analysis includes acomparison of a plurality of characteristics of the fingerprint to oneor more established fingerprint models (for example, those establishedwith respect to FIG. 3). Based on the analysis at operation 608, asubstrate processing program is selected at operation 610. The programselected at operation 610 is executed in the first process chamber 206at operation 612. The selected program results in processing of thesubstrate (such as deposition, etching, or the like) while chucking thesubstrate to remove bow. The selected program is chosen such thatsubstrate bow is minimized or eliminated during the processing, but thesubstrate is not over chucked to the point of damaging the substrate orunder-chucked such unsatisfactory bow remains.

At operation 614, a plurality of attributes of the processed substratecan be evaluated after the execution of the selected substrateprocessing program at operation 612. In some examples, operation 614 canalternately or additionally occur after subsequent downstream operationssuch as film deposition, patterning, or cleaning operations. Atoperation 616, a plurality of information based on the evaluation atoperation 614, including a substrate flatness analysis, can be storedfor further use and analysis, and/or used to update existing fingerprintmodels, processing programs, or other information.

In one example, subsequent to selecting the substrate processing programat operation 610, the substrate is transferred to a second processchamber. In such an example, operation 612 may occur in the secondprocess chamber. The second process chamber can be similar to the secondprocess chamber 208 in FIG. 2.

In an additional example, when a compressive substrate is detected asdiscussed in the method 600 in FIG. 6, a plurality of transfer operationparameters may be employed. Due to the bowed nature of the substrate,the substrate may not be stable during transfer, due to rocking orshifting that may occur due to the substrate's bowed bottom. Thetransfer operation parameters are selected to reduce rocking or shiftingof the substrate. The transfer operation parameters can include transferspeed of a transfer robot's arm or arms, gripping pressure, and/orgripping position.

In one example, a first substrate with a compressive bow is analyzed andassociated with a first substrate processing program. The firstsubstrate processing program corresponds to a first processing recipewith a first voltage, first duration, first pressure, and a first gas orgas mixture composition, and first temperature to facilitate bowalleviation. In one example, the first substrate processing programincludes heating the substrate to 200° C. to 500° C. The first voltageis from 500 V to 1000 V, and can be applied for 5 seconds to 3 minutes.The first voltage can be applied at a pressure from 1 Torr to 20 Torr inplasma formed from He and Ar. In another example, a second substratewith a tensile bow is associated with a substrate processing program.The second substrate processing program corresponds to a second processrecipe with a second voltage, second duration, second pressure, and asecond gas or gas mixture to be used while heating the substrate tofacilitate bow alleviation. The second substrate processing programinstructs the process chamber to heat the substrate to a temperature of200° C. to 500° C. A second voltage of 150 V to 500 V is applied to thesubstrate support for 5 seconds 3 minutes. The second voltage can beapplied at a chamber pressure from 1 Torr to 20 Torr, without generatingplasma inside of the process chamber, to correct substrate bow.

Accordingly, using the systems and methods discussed herein, incomingsubstrates can be analyzed to detect the presence, type, and degree ofbowing of a substrate. Once bowing is detected, a substrate processingprogram can be selected based on the type and degree of bowing andexecuted to alleviate the bow. Detecting and correcting a bowedsubstrate based on the type and extent of bowing, in contrast toconventional methods that apply the same correction method to some orall substrates regardless of the substrate condition, increases thequality of layers formed and/or patterned downstream, decreasing scrapand increasing device quality.

To facilitate understanding, identical reference numerals have beenused, where possible, to designate identical elements that are common tothe figures. It is contemplated that elements and features of oneembodiment may be beneficially incorporated in other embodiments withoutfurther recitation.

While the foregoing is directed to embodiments of the presentdisclosure, other and further embodiments of the disclosure may bedevised without departing from the basic scope thereof, and the scopethereof is determined by the claims that follow.

What is claimed is:
 1. A method for substrate processing, comprising:generating a plasma in a first process chamber while a substrate ispositioned therein; generating a fingerprint of the substrate based on aplurality of sensors in the first process chamber; comparing thefingerprint to a plurality of stored fingerprint models to determine ifthe substrate is deformed; selecting, based on a determination that thesubstrate is deformed, a substrate processing program for the substrateto correct the substrate deformation; executing the selected substrateprocessing program in the first process chamber; correcting, in responseto executing the selected substrate processing program, the substratedeformation; subsequent to correcting the substrate deformation,transferring the substrate to a second process chamber, the secondprocess chamber being coupled to the first process chamber via atransfer chamber; and performing a second operation in the secondprocess chamber.
 2. The method of claim 1, further comprising: executingthe selected substrate processing program in the second process chamber;and correcting, in response to executing the selected substrateprocessing program, the substrate deformation.
 3. The method of claim 1,wherein the plurality of sensors is configured to detect a low-frequencyor a high-frequency reflected power.
 4. The method of claim 1, whereinthe substrate deformation is one of a compressive bow or a tensile bow.5. The method of claim 1, wherein each fingerprint model is associatedwith a compressive bow or a tensile bow.
 6. The method of claim 1,wherein the plasma is generated from one or more of argon (Ar), helium(He), krypton (Kr), or xenon (Xe).
 7. A method for substrate processing,comprising: generating a fingerprint of a substrate positioned in firstprocess chamber, the fingerprint being generated based on a plurality ofsensors in the first process chamber configured to detect alow-frequency or a high-frequency reflected power to determine thesubstrate deformation; comparing the fingerprint to a plurality ofstored fingerprint models, wherein each fingerprint model is associatedwith a type of deformation of the substrate; and selecting, based on thecomparing, a substrate processing program for the substrate to correct asubstrate deformation; executing the selected substrate processingprogram in the first process chamber; correcting, in response toexecuting the selected substrate processing program, the substratedeformation; and subsequent to correcting the substrate deformation,performing a second operation in a second process chamber.
 8. The methodof claim 7, further comprising: disposing the substrate on a substratesupport in the second process chamber; executing the selected substrateprocessing program in the second process chamber; and correcting, inresponse to executing the selected substrate processing program, thesubstrate bow.
 9. The method of claim 7, wherein the second operationcomprises deposition, etching, or cleaning.
 10. A non-transitorycomputer-readable storage medium configured to execute instructions tocause a system to: generate a plasma in a first process chamber, asubstrate being positioned in the first process chamber; generate afingerprint of the substrate based on a plurality of sensors in thefirst process chamber, the plurality of sensors being configured todetect a low-frequency or a high-frequency reflected power; compare thefingerprint to a plurality of stored fingerprint models to determine itthe substrate is deformed; select, based on a determination that thesubstrate is deformed, a substrate processing program for the substrateto correct substrate deformation-execute the selected substrateprocessing program in the first process chamber; correct, in response toexecuting the selected substrate processing program, the substratedeformation; transfer the substrate to a second process chamber;position the substrate on a substrate support in the second processchamber; execute the selected substrate processing program in the secondprocess chamber; and correct, in response to executing the selectedsubstrate processing program, the substrate deformation.
 11. Thenon-transitory computer-readable storage medium of claim 10, wherein thesubstrate deformation is one of a compressive bow or a tensile bow. 12.The non-transitory computer-readable storage medium of claim 10, whereineach fingerprint model is associated with a compressive bow or a tensilebow.
 13. The non-transitory computer-readable storage medium of claim10, wherein the plasma is generated from one or more of argon (Ar),helium (He), krypton (Kr), or xenon (Xe).